? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 2.0 a i dm t c = 25 c, pulse width limited by t jm 5.0 a i a t c = 25 c 2.0 a e as t c = 25 c 150 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c86w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.50 g to-220 3.00 g to-252 0.35 g ds99817b(04/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 100 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 6.0 7.5 polar tm power mosfet n-channel enhancement mode avalanche rated ixta2n100p IXTP2N100P ixty2n100p v dss = 1000v i d25 = 2.0a r ds(on) 7.5 g = gate d = drain s = source tab = drain features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (i xta ) to-220 (i xtp ) d (tab) g s g s (tab) g s (tab) to-252 (ixty) applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor controls z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixta2n100p IXTP2N100P ixty2n100p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 1.0 1.7 s c iss 655 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 44 pf c rss 9.2 pf t d(on) resistive switching times 25 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 29 ns t d(off) r g = 25 (external) 80 ns t f 27 ns q g(on) 24.3 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 4.4 nc q gd 12.6 nc r thjc 1.45 c/w r thcs (to-220) 0.50 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 2.0 a i sm repetitive, pulse width limited by t jm 6.0 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 2a, -di/dt = 100a/ s, 800 ns v r = 100v, v gs = 0v note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline to-252 (ixty) outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115
? 2008 ixys corporation, all rights reserved ixta2n100p IXTP2N100P ixty2n100p fig. 1. output characteristics @ 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 01234567891011121314 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 024681012141618202224262830 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 1a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 2a i d = 1a fig. 5. r ds(on) normalized to i d = 1a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta2n100p IXTP2N100P ixty2n100p ixys ref: t_2n100p (2c) 04-03-08-a fig. 7. input admittance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 02468101214161820222426 q g - nanocoulombs v gs - volts v ds = 500v i d = 1a i g = 10ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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